SEMI HB-LED Committee ─ China’s Spring Meeting 2017 Update
By Sophia Huang, SEMI China
On April 20, SEMI HB-LED Committee China Technical Committee Chapter meeting was successfully held at Hanjue Yangming Hotel in Wuhu. The meeting was organized by SEMI China, hosted by Elec-Tech, and sponsored by MKS Instruments. Committee co-chair Dr. Yong Ji, president and general manager of GHTOT, chaired the meeting and welcomed all attendees. Almost 90 experts from nearly 40 enterprises and scientific research institutions attended the meeting, including:
Group photo of participants
Daniel Qi, chief analyst and director of SEMI China, gave the staff report. SEMI has published 972 standards related to the semiconductor industry. The HB-LED Standards Technical Committee has published eight standards, while ten HB-LED standards are currently under development, five from China.
Since its establishment in April 2014, the SEMI China HB-LED Standards Technical Committee has held seven meetings, published one HB-LED standard (SEMI HB8-0217: Test Method for Determining Orientation of a Sapphire Single Crystal, initiated by DDXDF) and has six standards in the pipeline under development. There are five task forces under the HB-LED China Technical Committee Chapter (see below):
The committee members reviewed three docs and authorized them for balloting in cycle 5-2017 or cycle 6-2017, they are:
- Doc 5776A, New Standard: Test Method for Detecting Surface Defects of GaN based LED Epitaxial Wafer Used for Manufacturing HB-LED, initiated by HC SemiTek
- Doc 5775B, New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers, initiated by AURORA
- Doc 5723B, New Standard: Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED Wafers, initiated by GHTOT
There is one new SNARF application from Patterned Sapphire Substrate Task Force. The committee members carefully reviewed it and it was approved.
The next meeting of the China HB-LED Standards TC chapter will be held on October 18.
June 21, 2017