Each year, SEMI publicly recognizes and honors technological and industrial leadership through the SEMI Award North America program. There are two distinctions for the Awards made within this program.
The awards program was established in 1979 to recognize enabling technical contributions by individuals and teams to the microelectronics industry. The enabling technological contributions to the microelectronics industry can be as broad as Integrated Circuit Design, Design for Manufacturability (DFM), new mask manufacturing methods, new device manufacturing architecture and methods and the assembly and test of integrated circuits and microelectromechanical (MEMS) devices.
In 2009, SEMI announced its first significant change by expanding criteria to include outstanding achievements in developing new and emerging technologies expected to have significant future value to the semiconductor industry. This change in criteria broadens the scope of the SEMI Award to recognize technology developments including semiconductors, photovoltaic solar displays and solid state lighting.
The highest honor achievable through the 2,000 member trade organization SEMI, is the Lifetime Achievement Award. The Honor is reserved for those individuals who repeatedly enable and lead the industry, technologically, throughout their professional career. See the following link "SEMI Award for North America recipients list"
Nominations for the Award are submitted by SEMI North America member companies. Call for nominations will open in March 2016.
Your nomination will be reviewed and selected by the SEMI Award for North America committee. Nominations for the 2016 SEMI Award for North America must be submitted by August 30, 2016 to be considered.
Award Recipient: Prof. Chenming Hu, Ph.D.
Analog circuit simulators, such as SPICE, form the foundation for all circuit simulators used in integrated circuit design, and compact transistor models are at the heart of these analog circuit simulators.
BSIM3 and its successors, developed in the BSIM group at UC Berkeley under the leadership of Professor Hu, are the industry standard for compact transistor modeling. For the past 20+ years, all commercial circuit simulators have included BSIM models.
For developing the BSIM families of compact transistor models and enabling their worldwide use to accelerate the adoption of advanced device technologies, Professor Hu is presented with the 2015 SEMI award.
Award Recipient: Alex Lidow, Ph,D,
Dr. Lidow has been an innovator leading the commercialization of more efficient power devices for his entire career. It began with the co-invention of the HexFET power MOSFET while a graduate student at Stanford University in 1977. His focus on low cost high performance power management turned to new materials when silicon based devices were reaching their limits in speed and efficiency. Gallium Nitride power devices were available in the 1990s due to their superior properties but their high cost limited their commercial success.
Dr. Lidow led the GaN development activity at International Rectifier and continued that work as CEO of Efficient Power Conversion Corporation (EPC) a company he co-founded in 2007. In 2009 EPC introduced the first commercial enhancement mode GaN power transistors. There were many challenges that were overcome from resolving packaging limitations to establishing a low cost supply chain enabling the successful commercialization of GaN power devices.
Award Recipients: Intel Team
Contribution: Implementation of Bulk CMOS finFET Production
The 2015 SEMI Award recognizes the process development and manufacturing teams at Intel for the first development, integration and introduction of a successful bulk finFET technology for CMOS IC production, first implemented at the 22 nm node in 2011.
The successful introduction of a bulk finFET process in commercial IC logic and I/O devices, aided by support from SEMI member companies with development of appropriate materials, processes and production tools, was a critically important milestone which has led to the wide-spread adoption of bulk finFETs as the technology of choice for non-planar CMOS logic devices.